CSD19505KCS MOS N 80V 100A 3.1mR 300W TO-220

MOSFET 80V N-CH NexFET Pwr MOSFET

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Manufacturer: Texas Instruments
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 3.1 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
Qg - Gate Charge: 76 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: NexFET
Packaging: Tube
Configuration: Single
Height: 16.51 mm
Length: 10.67 mm
Series: CSD19505KCS
Transistor Type: 1 N-Channel
Width: 4.7 mm
Brand: Texas Instruments
Forward Transconductance - Min: 262 S
Fall Time: 6 ns
Product Type: MOSFET
Rise Time: 16 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Unit Weight: 0.068784 oz