Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Type Designator: BUZ41A
Type of BUZ41A transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 75
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 4.5
Maximum junction temperature (Tj), °C: 150
Rise Time of BUZ41A transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 1.5
Package: TO220M
• N channel
• Enhancement mode
• Avalanche-rated
Type Designator: BUZ41A
Type of BUZ41A transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 75
Maximum drain-source voltage |Uds|, V: 500
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 4.5
Maximum junction temperature (Tj), °C: 150
Rise Time of BUZ41A transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 1.5
Package: TO220M