Bipolar Transistors - BJT NPN Hi-Curr High Spd
Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors - BJT
RoHS: Details
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 500 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 0.8 V
Pd - Power Dissipation: 180 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: BUTW92
Packaging: Tube
DC Current Gain hFE Max: 65
Height: 20.15 mm
Length: 15.75 mm
Technology: Si
Width: 5.15 mm
Brand: STMicroelectronics
Continuous Collector Current: 60 A
DC Collector/Base Gain hfe Min: 9
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 600
Subcategory: Transistors
Unit Weight: 0.229281 oz
Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors - BJT
RoHS: Details
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 500 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 0.8 V
Pd - Power Dissipation: 180 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: BUTW92
Packaging: Tube
DC Current Gain hFE Max: 65
Height: 20.15 mm
Length: 15.75 mm
Technology: Si
Width: 5.15 mm
Brand: STMicroelectronics
Continuous Collector Current: 60 A
DC Collector/Base Gain hfe Min: 9
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 600
Subcategory: Transistors
Unit Weight: 0.229281 oz