BUK444800 MOS N 800V 1.4A 30W TO-220F

Type Designator: BUK444-800B

Type of BUK444-800B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 1

Maximum junction temperature (Tj), °C: 150

Rise Time of BUK444-800B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 8

Package: SOT186