Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage
·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
Type Designator: BU407D
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 330
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 7.5
Noise Figure, dB: -
Package of BU407D transistor: TO220
DESCRIPTION
·With TO-220C package
·High voltage
·Fast switching speed
·Low saturation voltage
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
Type Designator: BU407D
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 330
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 5
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 7.5
Noise Figure, dB: -
Package of BU407D transistor: TO220