BS108 MOS N 200V 250mA 350mW TO-92

MOSFET N-CH 200V 250MA TO-92

Type Designator: BS108

Type of BS108 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 0.25

Maximum junction temperature (Tj), °C: 150

Rise Time of BS108 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO92