BS107 MOS N 200V 120MA 30R 500mW TO-92

MOSFET N-Chnl 200V

Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 120 mA
Rds On - Drain-Source Resistance: 30 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: -
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 mW
Channel Mode: Enhancement
Packaging: Bulk
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 100 mS
Height: 4.01 mm
Length: 4.77 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Rise Time: 8 ns
Series: BS107
4000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 7 ns
Width: 2.41 mm
Unit Weight: 0.016000 oz