BF859 NPN 300V 100mA 1800mW TO202

Type Designator: BF859

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1.8

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 90

Collector capacitance (Cc), pF: 4.2

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BF859 transistor: TO202