Type Designator: BF458
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 6
Maximum collector-base voltage |Ucb|, V: 250
Maximum collector-emitter voltage |Uce|, V: 250
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 26
Noise Figure, dB: -
Package of BF458 transistor: TO126
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 6
Maximum collector-base voltage |Ucb|, V: 250
Maximum collector-emitter voltage |Uce|, V: 250
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.1
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 26
Noise Figure, dB: -
Package of BF458 transistor: TO126