NPN Silicon RF Transistor
For low-noise, common base
VHF and FM stages
Type Designator: BF414
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 0.2
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of BF414 transistor: TO226
For low-noise, common base
VHF and FM stages
Type Designator: BF414
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 0.2
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: -
Package of BF414 transistor: TO226