BD681 Darlington NPN 100V 4A 40W TO-126

Complementary power Darlington transistors

Features
پ، Good hFE linearity
پ، High fT frequency
پ، Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Applications
پ، Linear and switching industrial equipment
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.

Type Designator: BD681

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of BD681 transistor: TO126