Trans 2SK3878 MOS N 900V 9A 1R 150W TO-3P

Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.0 O (typ.)
• High forward transfer admittance: ?Yfs? = 7.0 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 900 V
Drain-gate voltage (RGS = 20 kO) VDGR 900 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 9
Drain current
Pulse (Note 1) IDP 27
A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2) EAS 778 mJ
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 O, IAR = 9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.