Type Designator: 2SD2253
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1700
Maximum collector-emitter voltage |Uce|, V: 600
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 6
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 250
Forward current transfer ratio (hFE), min: 28
Noise Figure, dB: -
Package of 2SD2253 transistor: ISO218
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1700
Maximum collector-emitter voltage |Uce|, V: 600
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 6
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 250
Forward current transfer ratio (hFE), min: 28
Noise Figure, dB: -
Package of 2SD2253 transistor: ISO218