Type Designator: 2SD612
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 60
Forward current transfer ratio (hFE), min: 312
Noise Figure, dB: -
Package of 2SD612 transistor: TO126
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 10
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 60
Forward current transfer ratio (hFE), min: 312
Noise Figure, dB: -
Package of 2SD612 transistor: TO126