Type Designator: 2SD313
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 130
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD313 transistor: TO220
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 130
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2SD313 transistor: TO220