Type Designator: 2SC3182
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 140
Maximum collector-emitter voltage |Uce|, V: 140
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 30
Collector capacitance (Cc), pF: 220
Forward current transfer ratio (hFE), min: 55
Noise Figure, dB: -
Package of 2SC3182 transistor: TO247
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 140
Maximum collector-emitter voltage |Uce|, V: 140
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 10
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 30
Collector capacitance (Cc), pF: 220
Forward current transfer ratio (hFE), min: 55
Noise Figure, dB: -
Package of 2SC3182 transistor: TO247