Type Designator: 2SC2001
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.7
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 85
Collector capacitance (Cc), pF: 13
Forward current transfer ratio (hFE), min: 90
Noise Figure, dB: -
Package of 2SC2001 transistor: TO92
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.7
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 85
Collector capacitance (Cc), pF: 13
Forward current transfer ratio (hFE), min: 90
Noise Figure, dB: -
Package of 2SC2001 transistor: TO92