Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1400
Maximum collector-emitter voltage |Uce|, V: 500
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3.5
Maksimalna temperatura (Tj), °C: 150
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1400
Maximum collector-emitter voltage |Uce|, V: 500
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 3.5
Maksimalna temperatura (Tj), °C: 150