2SC536B NPN 30V 100mA 200mW TO92

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 115

Collector capacitance (Cc), pF: 6