Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 1
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 40
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 1
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 40