Large-Current Driving Applications
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 165
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 39
Forward current transfer ratio (hFE), min: 100
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 3
Maksimalna temperatura (Tj), °C: 165
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 39
Forward current transfer ratio (hFE), min: 100