Type Designator: 2SB776
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 70
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 8
Collector capacitance (Cc), pF: 200
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SB776 transistor: TO218
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 70
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 120
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 8
Collector capacitance (Cc), pF: 200
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SB776 transistor: TO218