Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maksimalna temperatura (Tj), °C: 135
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 2.5
Polarity: PNP
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maksimalna temperatura (Tj), °C: 135
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 2.5