Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 20
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1.2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 160
Collector capacitance (Cc), pF: 29
Polarity: PNP
Maximum collector power dissipation (Pc), W: 20
Maximum collector-base voltage |Ucb|, V: 120
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1.2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 160
Collector capacitance (Cc), pF: 29