PNP EPITAXIAL SILICON TRANSISTOR
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 180
Maximum collector-emitter voltage |Uce|, V: 180
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1.5
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 30
Maximum collector power dissipation (Pc), W: 25
Maximum collector-base voltage |Ucb|, V: 180
Maximum collector-emitter voltage |Uce|, V: 180
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 1.5
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 30