Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 20
Polarity: PNP
Maximum collector power dissipation (Pc), W: 30
Maximum collector-base voltage |Ucb|, V: 150
Maximum collector-emitter voltage |Uce|, V: 150
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 2
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 20