Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.75
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 20
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.75
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 20