Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 35
Maximum collector-emitter voltage |Uce|, V: 35
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF:
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 35
Maximum collector-emitter voltage |Uce|, V: 35
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 40
Collector capacitance (Cc), pF: