Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.55
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 40
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.55
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 40