SMD IRFR1205 MOS N 55V 44A 0.027R 107W TO-252

N-Channel MOSFET, 44 A, 55 V, 3-Pin DPAK Infineon IRFR1205TRPBF

Technical Reference
IRFR1205TRPBF HEXFET Power MOSFET Data SheetESD Control Selection Guide V1
Legislation and Compliance
RoHS Certificate of Compliance
Statement of conformity
COO (Country of Origin): MX
Product Details
N-Channel Power MOSFET 55V, Infineon
Infineon s range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type N
Maximum Continuous Drain Current 44 A
Maximum Drain Source Voltage 55 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 27 mO
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 107 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 6.22mm
Minimum Operating Temperature -55 °C
Height 2.39mm
Typical Gate Charge @ Vgs 65 nC @ 10 V
Series HEXFET
Maximum Operating Temperature +175 °C
Length 6.73mm
Transistor Material Si