MOSFET Transistor, N Channel, 24A, 60V, 0.032 ohm, 10V, 2.5V
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-state Resistance
RDS(on)1 = 44 m? MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 m? MAX. (VGS = 4.0 V, ID = 10 A)
• Low Ciss: Ciss = 760 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±20 A
Drain Current (Pulse) Note1 ID(pulse) ±50 A
Total Power Dissipation (TC = 25°C) PT1 30 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg ?55 to +150 °C
Single Avalanche Current Note2 IAS 15 A
Single Avalanche Energy Note2 EAS 23 mJ
Notes 1. PW ? 10 ?s, Duty cycle ? 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 ?, VGS = 20 ? 0 V
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-state Resistance
RDS(on)1 = 44 m? MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 m? MAX. (VGS = 4.0 V, ID = 10 A)
• Low Ciss: Ciss = 760 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±20 A
Drain Current (Pulse) Note1 ID(pulse) ±50 A
Total Power Dissipation (TC = 25°C) PT1 30 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg ?55 to +150 °C
Single Avalanche Current Note2 IAS 15 A
Single Avalanche Energy Note2 EAS 23 mJ
Notes 1. PW ? 10 ?s, Duty cycle ? 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 ?, VGS = 20 ? 0 V