SMD IRL3716SPBF MOS N 20V 180A 4mR 110W TO-263

MOSFET 20V 1 N-CH HEXFET 4mOhms 53nC

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 180 A
Rds On - Drain-Source Resistance: 4.8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 53 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 210 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Type: Smps MOSFET
Width: 6.22 mm
Brand: Infineon / IR
Fall Time: 36 ns
Product Type: MOSFET
Rise Time: 140 ns
Factory Pack Quantity: 3200
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 38 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: SP001568304
Unit Weight: 0.139332 oz