SMD IRL3713SPBF MOS N 30V 260A 330W TO-263

MOSFET N-CH 30V 260A D2PAK

MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC


Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 200 A
Rds On - Drain-Source Resistance: 4 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 75 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Brand: Infineon / IR
Fall Time: 57 ns
Product Type: MOSFET
Rise Time: 160 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 16 ns
Part # Aliases: SP001558042
Unit Weight: 0.139332 oz