NPN miniature (SMD) silicon planar-epitaxial high-frequency transistor.
Type Designator: SFE245
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Transition Frequency (ft): 910 MHz
Forward Current Transfer Ratio (hFE), MIN: 38
Noise Figure, dB: -
Package: SOT23
Type Designator: SFE245
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Transition Frequency (ft): 910 MHz
Forward Current Transfer Ratio (hFE), MIN: 38
Noise Figure, dB: -
Package: SOT23