Power MOSFET 12 A, 60 V P-Channel DPAK
Manufacturer:ON Semiconductor
Product Category:MOSFET
RoHS: Details
Technology:Si
Mounting Style:SMD/SMT
Package / Case:TO-252-3
Number of Channels:1 Channel
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:60 V
Id - Continuous Drain Current:12 A
Rds On - Drain-Source Resistance:155 mOhms
Vgs - Gate-Source Voltage:20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:55 W
Configuration:Single
Channel Mode:Enhancement
Packaging:Tube
Height:2.38 mm
Length:6.73 mm
Series:NTD2955
Transistor Type:1 P-Channel
Type:MOSFET
Width:6.22 mm
Brand:ON Semiconductor
Forward Transconductance - Min:8 S
Fall Time:48 ns
Product Type:MOSFET
Rise Time:45 ns
Factory Pack Quantity:75
Subcategory:MOSFETs
Typical Turn-Off Delay Time:26 ns
Typical Turn-On Delay Time:10 ns
Manufacturer:ON Semiconductor
Product Category:MOSFET
RoHS: Details
Technology:Si
Mounting Style:SMD/SMT
Package / Case:TO-252-3
Number of Channels:1 Channel
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:60 V
Id - Continuous Drain Current:12 A
Rds On - Drain-Source Resistance:155 mOhms
Vgs - Gate-Source Voltage:20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:55 W
Configuration:Single
Channel Mode:Enhancement
Packaging:Tube
Height:2.38 mm
Length:6.73 mm
Series:NTD2955
Transistor Type:1 P-Channel
Type:MOSFET
Width:6.22 mm
Brand:ON Semiconductor
Forward Transconductance - Min:8 S
Fall Time:48 ns
Product Type:MOSFET
Rise Time:45 ns
Factory Pack Quantity:75
Subcategory:MOSFETs
Typical Turn-Off Delay Time:26 ns
Typical Turn-On Delay Time:10 ns