SMALL SIGNAL PNP TRANSISTOR
MARKING CODE : 3F
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: - 250 mV
Maximum DC Collector Current: 0.1 A
Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: BC857B
DC Current Gain hFE Max: 220
Height: 1 mm
Length: 3.05 mm
Technology: Si
Width: 1.4 mm
Brand: Diodes Incorporated
Continuous Collector Current: 0.1 A
DC Collector/Base Gain hfe Min: 220 at 2 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Unit Weight: 0.050717 oz
MARKING CODE : 3F
Manufacturer: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: - 250 mV
Maximum DC Collector Current: 0.1 A
Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: BC857B
DC Current Gain hFE Max: 220
Height: 1 mm
Length: 3.05 mm
Technology: Si
Width: 1.4 mm
Brand: Diodes Incorporated
Continuous Collector Current: 0.1 A
DC Collector/Base Gain hfe Min: 220 at 2 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Unit Weight: 0.050717 oz