Single N-Channel MOSFET MOSFT 30V 13A 10mOhm 9.5nC
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 13 A
Rds On - Drain-Source Resistance: 10.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 9.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: MouseReel
Packaging: Reel
Configuration: Single
Height: 1.75 mm
Length: 4.9 mm
Transistor Type: 1 N-Channel
Width: 3.9 mm
Brand: Infineon / IR
Forward Transconductance - Min: 62 S
Fall Time: 3.8 ns
Product Type: MOSFET
Rise Time: 6.3 ns
Factory Pack Quantity: 4000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 8.7 ns
Unit Weight: 0.017870 oz
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 13 A
Rds On - Drain-Source Resistance: 10.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 9.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: MouseReel
Packaging: Reel
Configuration: Single
Height: 1.75 mm
Length: 4.9 mm
Transistor Type: 1 N-Channel
Width: 3.9 mm
Brand: Infineon / IR
Forward Transconductance - Min: 62 S
Fall Time: 3.8 ns
Product Type: MOSFET
Rise Time: 6.3 ns
Factory Pack Quantity: 4000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 8.7 ns
Unit Weight: 0.017870 oz