Complementary Enhancement Mode Field Effect Transistor
40V 5A
MOSFET DUAL
n-channel p-channel
VDS (V) = 40V -40V
ID = 6A (VGS=10V) -5A (VGS = -10V
)
RDS(ON) RDS(ON)
< 31m? (VGS=10V) < 45m? (VGS = -10V)
< 45m? (VGS=4.5V) < 63m? (VGS = -4.5V)
Manufacturer
ALPHA & OMEGA SEMICONDUCTOR
Type of transistor
N/P-MOSFET
Polarisation
unipolar
Kind of transistor
complementary pair
Drain-source voltage
40/-40V
Drain current
5/-4A
Power dissipation
1.28W
Case
SO8
Gate-source voltage
±20V
On-state resistance
45/30mO
Mounting
SMD
Gate charge
17/8.9nC
Kind of channel
enhanced
40V 5A
MOSFET DUAL
n-channel p-channel
VDS (V) = 40V -40V
ID = 6A (VGS=10V) -5A (VGS = -10V
)
RDS(ON) RDS(ON)
< 31m? (VGS=10V) < 45m? (VGS = -10V)
< 45m? (VGS=4.5V) < 63m? (VGS = -4.5V)
Manufacturer
ALPHA & OMEGA SEMICONDUCTOR
Type of transistor
N/P-MOSFET
Polarisation
unipolar
Kind of transistor
complementary pair
Drain-source voltage
40/-40V
Drain current
5/-4A
Power dissipation
1.28W
Case
SO8
Gate-source voltage
±20V
On-state resistance
45/30mO
Mounting
SMD
Gate charge
17/8.9nC
Kind of channel
enhanced