IGBT Transistors IGBT, 1200V, 25A 200W
High Power Switching Applications
• The 3rd Generation
• Enhancement-Mode
• High Speed: tf = 0.32 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)
High Power Switching Applications
• The 3rd Generation
• Enhancement-Mode
• High Speed: tf = 0.32 µs (max)
• Low Saturation Voltage: VCE (sat) = 2.7 V (max)