FQA9N90C MOS N 9A 900V 1.4R 280W TO-247

MOSFET 900V N-Channel QFET

Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-3PN-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 1.4 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 280 W
Channel Mode: Enhancement
Tradename: QFET
Height: 20.1 mm
Length: 16.2 mm
Series: FQA9N90C_F109
Transistor Type: 1 N-Channel
Width: 5 mm
Brand: ON Semiconductor / Fairchild
Fall Time: 75 ns
Product Type: MOSFET
Rise Time: 120 ns
Factory Pack Quantity: 450
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 50 ns