HGTG30N60B3D IGBT W/D 60A 600V 208W TO-247

IGBT Transistors 600V IGBT UFS N-Channel

Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.45 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 208 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: HGTG30N60B3D
Packaging: Tube
Continuous Collector Current Ic Max: 60 A
Height: 20.82 mm
Length: 15.87 mm
Width: 4.82 mm
Brand: ON Semiconductor / Fairchild
Continuous Collector Current: 60 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Part # Aliases: HGTG30N60B3D_NL
Unit Weight: 0.225401 oz