BSM100GB120DN2 IGBT Module DUAL 150A 1200V

Infineon Technologies IGBT Modules 1200V 150A DUAL 800W

Product Category: IGBT Modules
RoHS: RoHS Compliant Details
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 200 nA
Pd - Power Dissipation: 800 W
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10