Type Designator: 2N1304
Material of transistor: Ge
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.15
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 25
Maximum collector current |Ic max|, A: 0.3
Maksimalna temperatura (Tj), °C: 85
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2N1304 transistor: TO5
Material of transistor: Ge
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.15
Maximum collector-base voltage |Ucb|, V: 25
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 25
Maximum collector current |Ic max|, A: 0.3
Maksimalna temperatura (Tj), °C: 85
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of 2N1304 transistor: TO5