NPN SILICON POWER
TRANSISTOR
* Collector-base voltage: V(BR)CBO=600V
* Collector current: IC=0.2A
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150C
Tstg Storage Temperature -55~150C
TRANSISTOR
* Collector-base voltage: V(BR)CBO=600V
* Collector current: IC=0.2A
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150C
Tstg Storage Temperature -55~150C