FHP3205 ( IRF3205 ) MOS N 110A 55V 6.5mR 200W TO-220

MOSFET N-Channel, Metal Oxide
Type Designator: FHP3205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 146 nC

Rise Time (tr): 101 nS

Drain-Source Capacitance (Cd): 781 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220