IRF1010E MOS N 60V 84A 12mR 200W TO-220

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84?
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
IDM Pulsed Drain Current پ 330
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Currentپ 50 A
EAR Repetitive Avalanche Energyپ 17 mJ
dv/dt Peak Diode Recovery dv/dt ? 4.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)