EPITAXIAL PLANAR PNP TRANSISTOR
Type Designator: KTC9012
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.625
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 64
Noise Figure, dB: -
Package of KTC9012 transistor: TO92
Type Designator: KTC9012
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.625
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 64
Noise Figure, dB: -
Package of KTC9012 transistor: TO92