Enhancement-Mode MOSFET Transistors
Type Designator: VN2222L
Type of VN2222L transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.8
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V: 15
Maximum drain current |Id|, A: 0.23
Maximum junction temperature (Tj), °C: 150
Rise Time of VN2222L transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 25
Maximum drain-source on-state resistance (Rds), Ohm: 7.5
Package: TO-92
Type Designator: VN2222L
Type of VN2222L transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 0.8
Maximum drain-source voltage |Uds|, V: 60
Maximum gate-source voltage |Ugs|, V: 15
Maximum drain current |Id|, A: 0.23
Maximum junction temperature (Tj), °C: 150
Rise Time of VN2222L transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 25
Maximum drain-source on-state resistance (Rds), Ohm: 7.5
Package: TO-92