Fairchild BS170 MOS N 60V 500mA 1.2R 830mW TO-92

N-Channel Enhancement Mode Field Effect Transistor

Type Designator: BS170

Type of BS170 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.83

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Rise Time of BS170 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO92