Type Designator: BF392
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.625
Maximum collector-base voltage |Ucb|, V: 250
Maximum collector-emitter voltage |Uce|, V: 250
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 35
Collector capacitance (Cc), pF: 3
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of BF392 transistor: TO92
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.625
Maximum collector-base voltage |Ucb|, V: 250
Maximum collector-emitter voltage |Uce|, V: 250
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.5
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 35
Collector capacitance (Cc), pF: 3
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of BF392 transistor: TO92